lds - 0297 , rev . 1 ( 13 0370 ) ?201 3 microsemi corporation page 1 of 5 1n6910u tk 2 C 1n6912utk2, as and cs available on commercial versions thinkey tm silicon s chottky d iode qualified per mil - prf - 19500/723 qualified levels : jan, jantx, and jantxv description this defense logistics agency (dla) qualified schottky diodes offer great value for aer ospace and defense applications requiring high density power and excellent heat dissipation ( typically 0.85 - 0.95 degrees c per watt (c/w)) . th e 1n6910 utk 2 as through 1n6912utk2as device pola rity is anode - to - strap (standard) and is also available optionally in 1n69 10 utk 2 cs through 1n6912utk2cs as cathode - to - strap. this part can also be ordered in a strapless version. u p- screening for high - reliability applications is also available . microsemi also offers numerous other products to meet higher and lower power voltage regulation applications. thinkey tm 2 package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n 69 10 C 1n6912 number series . ? oxide passivated structure. ? guard ring protection for increased reverse energy capability. ? epitaxial structure minimizes forward voltage drop. ? hermetically sealed, low profile ceramic surface mount power package. ? jan, jantx, and jantxv qualifications are available per mil - prf - 19500/723. (s ee part nomenclature for all available options). ? rohs compliant versions available (commercial grade only) . applications / benefits ? low package inductance . ? very low thermal resistance . ? a lso a vailable with no strap as 1n69 10 utk 2 , 1n6911utk2 and 1n6912utk2 by special request. ? rugged ceramic and metal construction with no wire bonds. ? high surge capabilities and enable doub le - side cooling. maximum ratings @ t c = +25 c, unless otherwise noted msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit junction and storage temperature range t j and t stg - 65 to +150 c thermal resistance junction to case ( anode - to - strap ) r ? jc 0. 85 c/w thermal resistance junction to case ( cathode - to - strap ) ( also applicable to strapless option ) r ? jc 0. 95 c/w working peak reverse voltage : 1n6910 utk2,cs,as 1n6911utk2,cs,as 1n6912utk2,cs,as v rwm 15 30 45 v average rectified output current , t c = +100 c i o 25 a non - repetitive peak surge current ( tp = 8.3 ms, half sine - wave ) i fsm 4 00 a (pk) downloaded from: http:///
lds - 0297 , rev . 1 ( 13 0370 ) ?201 3 microsemi corporation page 2 of 5 1n6910u tk 2 C 1n6912utk2, as and cs mechanical and packaging ? case: ceramic -m olybdenum thinkey 2. ? terminals: tin/lead s older or rohs compliant m atte/ t in (on commercial grade on ly) plating . ? marking: part number and p olarity s ymbol . ? polarity: standard is a node to s trap. reverse is c athode to s trap . ? weight: approximately 0.5 grams. ? see p ackage d imensions on page 4. part nomenclature ja n 1n69 10 u tk 2 as (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number ( see electrical characteristic s t able ) surface mount package rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant polarity as= anode to strap (standard) cs=cathode - to -strap blank=no strap package size package class symbols & definitions symbol definition f frequency i f forward current, dc i r reverse current, dc t c case temperature t p pulse time v r reverse voltage, dc downloaded from: http:///
lds - 0297 , rev . 1 ( 13 0370 ) ?201 3 microsemi corporation page 3 of 5 1n6910u tk 2 C 1n6912utk2, as and cs electrical characteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol m in m ax unit reverse (leakage) current v r = 15 v, tc = 25 c v r = 30 v, tc = 25 c v r = 45 v, tc = 25 c 1n6910utk2, cs, as 1n6911utk2, cs, as 1n6912utk2, cs, as i r1 1.2 ma v r = 15 v, tc = +125 c v r = 30 v, tc = +125 c v r = 45 v, tc = +125 c 1n6910utk2, cs, as 1n6911ut k2, cs, as 1n6912utk2, cs, as i r2 250 ma forward voltage pulse test, p ulse width tp = 300 s i f = 10 a (pk) , t c = + 25 c 1n6910utk2, cs, as 1n6911utk2, cs, as 1n6912utk2, cs, as v f1 0.43 0.42 0.52 v i f = 25 a (pk) , t c = + 25 c 1n6910utk2, cs, as 1n6911utk2, cs, as 1n6912utk2, cs, as v f2 0.52 0.54 0.64 v i f = 25 a (pk) , t c = +1 25 c 1n6910utk2, cs, as 1n6911utk2, cs, as 1n6912utk2, cs, as v f3 0 .46 0.55 0.63 v junction capacitance v r = 5 v , f = 1 mhz, v sig = 50 mv (p - p) 1n6910utk2, cs, as 1n691 1utk2, cs, as 1n6912utk2, cs, as c j 2000 1250 1000 pf breakdown voltage pulse test, tp = 35 ms i r = 5.0 ma (pk) , t c = 25 c 1n6910utk2, cs, as 1n6911utk2, cs, as 1n6912utk2, cs, as v ( br)1 16.5 33 50 v i r = 5.0 ma (pk) , t c = - 55 c 1n6910utk2, c s, as 1n6911utk2, cs, as 1n6912utk2, cs, as v ( br)2 15 30 45 v downloaded from: http:///
lds - 0297 , rev . 1 ( 13 0370 ) ?201 3 microsemi corporation page 4 of 5 1n6910u tk 2 C 1n6912utk2, as and cs package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. in accordance with asme y14.5m, diameters are equivalent to x symbology. see pad layout on next page. dimensions ltr inch millimeters min max min max bl 0. 230 0.250 5.84 6.35 bt - 0.125 - 3.18 blt - 0.115 - 2.92 c 0.293 0.333 7.44 8.46 e .0 23 nom . 58 nom f 0.171 0.181 4.34 4.60 lc .040 nom 1.02 nom lf 0.055 0.075 1.40 1.91 lt 0.005 0.015 0.127 0.381 lw 0.085 0.115 2.16 2.92 downloaded from: http:///
lds - 0297 , rev . 1 ( 13 0370 ) ?201 3 microsemi corporation page 5 of 5 1n6910u tk 2 C 1n6912utk2, as and cs pad layout downloaded from: http:///
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